Datasheet > UNR8231|UN8231

UNR8231|UN8231

更新时间： 2024-11-24 23:39:35

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	81K
描述
Composite Device - Transistors with built-in Resistor

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UNR8231|UN8231 数据手册

Transistors with built-in Resistor

UNR8231/8231A (UN8231/8231A)

Silicon NPN epitaxial planar type

Unit: mm

6.9 0.1

4.0

2.5 0.1

(0.8)

For switching

0.7

■ Features

• High forward current transfer ratio h_FE

0.65 max.

•

Resistor built-in type, allowing downsizing of the equipment

and reduction of the number of parts

Available in a type with radial taping

■ Absolute Maximum Ratings T_a= 25°C

+0.10

Parameter

Symbol

Rating

Unit

0.45

–0.05

1.05 ^0.05

Collector-base voltage UNR8231

V_CBO

2.5 0.5

2.5 ^0.5

(Emitter open)

UNR8231A

UNR8231

1: Emitter

2: Collector

3: Base

Collector-emitter

voltage (Base open)

Collector current

Peak collector current

V_CEO

UNR8231A

MT-2-A1 Package

I_C

I_CP

P_T

0.7

Internal Connection

1.5

Total power dissipation ^*

Junction temperature

Storage temperature

°C

R₁(1 kΩ)

T_j

150

R₂

(4.7 kΩ)

T_stg

−55 to +150

Note) : Printed circuit board: Copper foil area of 1 cm²or more, and the

board thickness of 1.7 mm for the collector portion

■ Electrical Characteristics T_a= 25°C 3°C

Parameter

Symbol

Conditions

I_C= 10 µA, I_E= 0

Min

Typ

Max

Unit

Collector-base voltage UNR8231

V_CBO

(Emitter open)

UNR8231A

UNR8231

UNR8231A

Collector-emitter

voltage (Base open)

V_CEO

I_C= 1 mA, I_B= 0

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio ^*

Collector-emitter saturation voltage ^*

Input resistance

I_CBO

I_CEO

I_EBO

h_FE

V_CB= 15 V, I_E= 0

µA



V_CE= 15 V, I_B= 0

V_EB= 14 V, I_C= 0

0.5

2100

0.4

1.3

V_CE= 10 V, I_C= 150 mA

I_C= 500 mA, I_B= 5 mA

800

0.7

V_CE(sat)

R₁

1.0

kΩ



Resistance ratio

R₁/R₂

f_T

0.016 0.021 0.025

200

Transition frequency

V_CB= 10 V, I_E= −50 mA, f = 200 MHz

MHz

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Pulse measurement

Note) The part numbers in the parenthesis show conventional part number.

Publication date: January 2004

SJH00033BED

12 3

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与UNR8231|UN8231相关器件

型号	品牌	获取价格	描述	数据表
UNR8231A	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 700MA I(C) \| SC-71
UNR8231A(UN8231A)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR8231A\|UN8231A	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR9110	PANASONIC	获取价格	Silicon PNP epitaxial planer transistor
UNR9110G	PANASONIC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
UNR9110J	PANASONIC	获取价格	Silicon PNP epitaxial planar type
UNR9110J(UN9110J)	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR9110J\|UN9110J	ETC	获取价格	Composite Device - Transistors with built-in Resistor
UNR9110Q	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416
UNR9110R	ETC	获取价格	TRANSISTOR \| 50V V(BR)CEO \| 100MA I(C) \| SOT-416

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